You are here: Home » DIODES » 1N5820 THRU 1N5822 Schottky Barrier Rectifier Diode 3A 40V DO-201AD

loading

1N5820 THRU 1N5822 Schottky Barrier Rectifier Diode 3A 40V DO-201AD

  • 1N5820 THRU 1N5822

  • trusTec

  • 200，000pcs

  • Negotiable (FOB/CNF/CIF)

  • T/T, L/C

  • 15-30 days fresh products after order confirmation.

  • 200,00000 pcs per month

Availability:
Quantity:
Inquire

facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

Feature



Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

Metal silicon junction,majority carrier conduction

Guardring for overvoltage protection

Low power loss,high erriciency

High current capability,low forward voltage drop

High surge capability

For use in low voltage,high frequency inverters, free wheeling,and polarity protection applications

High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension


Mechanical Data



Case:

JEDEC DO-201AD molded plastic body


Terminals:

Plated axial leads, solderable per MIL-STD-750, Method 2026


Polarity:

Color band denotes cathode end


Mounting Position:

Any


Weight:

0.04 ounce, 1.10 grams



Product Drawing




Maximum Ratings and Electrical Characteristics



Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.



 SYMBOLS 1N5820 1N5821 1N5822 UNITS
Maximum repetitive peak reverse voltage VRRM 20 30 40 VOLTS
Maximum RMS voltage VRMS 14 21 28 VOLTS
Maximum DC blocking voltage VDC 20 30 40 VOLTS
Maximum average forward rectified current 0.375”(9.5mm) lead length at TL=95 ℃ I(AV) 3.0 Amp
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 80.0 Amps
Maximum instantaneous forward voltage at 3.0A VF 0.475 0.500 0.525 Volts
Maximum DC reverse current TA=25 ℃
at rated DC blocking voltage TA=100 ℃		 IR 0.5
40.0		 mA
Typical junction capacitance (NOTE 1) CJ 300.0 pF
Typical thermal resistance (NOTE 2) RθJA 40.0 ℃/W
Operating junction and storage temperature range TJ,TSTG -65 to +125 ℃


Note:


1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

download 1N5820 THRU 1N5822.pdf

Previous: 
Next: